With ‘The Machine,’ HP May Have Invented a New Kind of Computer – Businessweek

If Hewlett-Packard (HPQ) founders Bill Hewlett and Dave Packard are spinning in their graves, they may be due for a break. Their namesake company is cooking up some awfully ambitious industrial-strength computing technology that, if and when it’s released, could replace a data center’s worth of equipment with a single refrigerator-size machine. via With ‘The Machine,’… Continue reading With ‘The Machine,’ HP May Have Invented a New Kind of Computer – Businessweek

Follow-Up – EETimes on SanDisk UltraDIMMs

http://www.eetimes.com/document.asp?doc_id=1320775 “The eXFlash DIMM is an option for IBM‘s System x3850 and x3950 X6 servers providing up to 12.8 TB of flash capacity. (Although just as this story was being written, IBM announced it was selling its x86 server business to Lenovo for $2.3 billion).” Sadly it seems the party is over before it even… Continue reading Follow-Up – EETimes on SanDisk UltraDIMMs

Flash DOOMED to drive itself off a cliff – boffins • The Register

Microsoft and University of California San Diego researchers have said flash has a bleak future because smaller and more densely packed circuits on the chips silicon will make it too slow and unreliable. Enterprise flash cost/bit will stagnate and the cutting edge that is flash will become a blunted blade. via Flash DOOMED to drive… Continue reading Flash DOOMED to drive itself off a cliff – boffins • The Register

Could MRAM Ultimately Replace DRAM? < PC World.in

Everspin on Wednesday said its MRAM magnetoresistive random access memory is trickling into products that require reliable, fast non-volatile memory that can preserve data in the event of a power failure. via Could MRAM Ultimately Replace DRAM? < Other PC Hardware Components, Technology, RAM, Components, Technology < PC World India News < PC World.in. Magneto-Resistive… Continue reading Could MRAM Ultimately Replace DRAM? < PC World.in

AnandTech – Intel and Micron IMFT Announce Worlds First 128Gb 20nm MLC NAND

There’s a point of diminishing return for Flash memory where further shrinking the chips makes them less and less durable over time. Which has led me to believe there’s a ‘plateau’ of size/durability that will soon be reached by most Flash memory manufacturers. However Intel’s deep reserve of research in silicon semiconductors is helping lead the charge to the next generation of more dense, smaller Flash memory and Micron is partnering with them to help

Birck Nanotechnology Center – Ferroelectric RAM

The FeTRAMs are similar to state-of-the-art ferroelectric random access memories, FeRAMs, which are in commercial use but represent a relatively small part of the overall semiconductor market. Both use ferroelectric material to store information in a nonvolatile fashion, but unlike FeRAMS, the new technology allows for nondestructive readout, meaning information can be read without losing… Continue reading Birck Nanotechnology Center – Ferroelectric RAM

OCZ samples twin-core ARM SSD controller • The Register

OCZ is swiftly moving up the charts of manufacturers attempting to differentiate product at the consumer level. Between the PCIe based RevoDrives and this new announcement of it’s own Flash memory controller it appears they are out front on the performance and future performance fronts. Here’s to any manufacturer who decides to not just license SandForce controllers but also design and produce their own.

Micron’s ClearNAND: 25nm + ECC

Whenever you have a refinement in a technologically sophisticated product there are always side effects. With silicon chips, some side effects were very beneficial (as sizes shrink, speeds can increase). However with Flash memory chips, multi-level memory cells are starting to suffer from the point of diminishing returns. Smaller sizes mean more fragile, more susceptible to wearing out. So the next evolution is to build in some extra circuitry and insurance to prevent the failures from ruining your day, so let’s take a look at Error Correcting Codes (ECC):