ARM Pitches Tri-gate Transistors for 20nm and Beyond

. . . 20 nm may represent an inflection point in which it will be necessary to transition from a metal-oxide semiconductor field-effect transistor MOSFET to Fin-Shaped Field Effect Transistors FinFET or 3D transistors, which Intel refers to as tri-gate designs that are set to debut with the companys 22 nm Ivy Bridge product generation. […]